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Mendeley readers
Chapter title |
Device Design and Scalability of an Impact Ionization MOS Transistor with an Elevated Impact Ionization Region
|
---|---|
Chapter number | 31 |
Book title |
Simulation of Semiconductor Processes and Devices 2007
|
Published by |
Springer, Vienna, January 2007
|
DOI | 10.1007/978-3-211-72861-1_31 |
Book ISBNs |
978-3-21-172860-4, 978-3-21-172861-1
|
Authors |
Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Ganesh Samudra, Yee-Chia Yeo, Toh, Eng-Huat, Wang, Grace Huiqi, Chan, Lap, Samudra, Ganesh, Yeo, Yee-Chia |
Mendeley readers
The data shown below were compiled from readership statistics for 8 Mendeley readers of this research output. Click here to see the associated Mendeley record.
Geographical breakdown
Country | Count | As % |
---|---|---|
Unknown | 8 | 100% |
Demographic breakdown
Readers by professional status | Count | As % |
---|---|---|
Researcher | 4 | 50% |
Student > Ph. D. Student | 3 | 38% |
Unknown | 1 | 13% |
Readers by discipline | Count | As % |
---|---|---|
Engineering | 5 | 63% |
Materials Science | 1 | 13% |
Mathematics | 1 | 13% |
Unknown | 1 | 13% |