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Simulation of Semiconductor Processes and Devices 2007

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Table of Contents

  1. Altmetric Badge
    Book Overview
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    Chapter 1 Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation
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    Chapter 2 Atomistic Modeling of Defect Diffusion in SiGe
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    Chapter 3 Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches
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    Chapter 4 Molecular Dynamics Modeling of Octadecaborane Implantation into Si
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    Chapter 5 High Performance, Strained-Ge, Heterostructure p-MOSFETs
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    Chapter 6 Strain Induced Drain-Current Enhancement Mechanism in Short-Channel Bulk Ge-pMOSFETs with Different Channel and Surface Orientations
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    Chapter 7 Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs
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    Chapter 8 Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants
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    Chapter 9 Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth
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    Chapter 10 Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias
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    Chapter 11 Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology
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    Chapter 12 Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT)
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    Chapter 13 Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment
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    Chapter 14 Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs
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    Chapter 15 Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs
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    Chapter 16 Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs
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    Chapter 17 Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems
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    Chapter 18 Energy Conservation in Collisional Broadening
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    Chapter 19 A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells
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    Chapter 20 Upcoming Challenges for Process Modeling
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    Chapter 21 Physics-Based Simulation of 1/ f Noise in MOSFETs under Large-Signal Operation
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    Chapter 22 Thin Body Effects to Suppress Random Dopant Fluctuations in Nano-Scaled MOSFETs
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    Chapter 23 ‘Atomistic’ Mesh Generation for the Simulation of Semiconductor Devices
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    Chapter 24 Line Edge and Gate Interface Roughness Simulations of Advanced VLSI SOI-MOSFETs
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    Chapter 25 Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL
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    Chapter 26 Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/D for pFETs
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    Chapter 27 Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner
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    Chapter 28 3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor
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    Chapter 29 Impact of Two-Step Recessed SiGe S/D Engineering for Advanced pMOSFETs of 32 nm Technology Node and Beyond
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    Chapter 30 Simulation Study of Multiple FIN FinFET Design for 32nm Technology Node and Beyond
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    Chapter 31 Device Design and Scalability of an Impact Ionization MOS Transistor with an Elevated Impact Ionization Region
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    Chapter 32 A Prototype Wafer Processing TCAD Tool Composed of BMD Simulation Module, Metal Gettering and Thermal Stress/Slip Functions for Scaled Device Design Phase
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    Chapter 33 Compact Modeling of Phase-Change Memories
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    Chapter 34 Modeling of NBTI Degradation for SiON pMOSFET
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    Chapter 35 Modeling Study of Ultra-Thin Ge Layers Using Tight-Binding, LCBB and kp Methods
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    Chapter 36 Analysis of Silicon Dioxide Interface Transition Region in MOS Structures
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    Chapter 37 Tunneling Properties of MOS Systems Based on High-k Oxides
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    Chapter 38 First-Principles Investigation on Oxide Trapping
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    Chapter 39 A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full-Band Tight-Binding Approach
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    Chapter 40 Influence of Oxygen Composition and Carbon Impurity on Electronic Reliability of HfO 2
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    Chapter 41 Upcoming Physics Challenges for Device Modeling
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    Chapter 42 Transient Characterization of Interface Traps in 4H-SiC MOSFETs
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    Chapter 43 Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating Under Pulsed-Power Conditions
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    Chapter 44 Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes
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    Chapter 45 Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures
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    Chapter 46 Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands
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    Chapter 47 Monte Carlo Study on Number of Scattering Events for Quasi-Ballistic Transport in MOSFETs
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    Chapter 48 Modeling of Macroscopic Transport Parameters in Inversion Layers
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    Chapter 49 Study of the Junction Depth Effect on Ballistic Current Using the Subband Decomposition Method
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    Chapter 50 Transport in Silicon Nanowire and Single-Electron Transistors
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    Chapter 51 Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets
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    Chapter 52 Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors
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    Chapter 53 Modeling Carbon Nanotube Electron-Phonon Resonances Shows Terahertz Current Oscillations
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    Chapter 54 Crystalline Orientation Effects on Ballistic Hole Current in Ultrathin DG SOI MOSFETs
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    Chapter 55 Numerical Simulation of Field Emission in the Surface Conduction Electron-Emitter Display
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    Chapter 56 Microscopic Modelling of Quantum Well Solar Cells
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    Chapter 57 Monte Carlo Simulation of Time-Dependent Operation of Quantum Cascade Lasers
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    Chapter 58 Multiscale Simulation of Electronic and Optoelectronic Devices with TiberCAD
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    Chapter 59 Hopping Transport of Electrons via Si-Dot
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    Chapter 60 Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method
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    Chapter 61 Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation
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    Chapter 62 Modeling of Shock Waves in Two-Dimensional Electron Channels: Effect of Tsunami
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    Chapter 63 Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping
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    Chapter 64 Electrothermal Monte Carlo Study of Charge Confinement in GaN HFETs
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    Chapter 65 Hydrodynamic Modeling of AlGaN/GaN HEMTs
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    Chapter 66 Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Grating Field Plates
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    Chapter 67 Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer
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    Chapter 68 Compact Modeling for New Transistor Structures
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    Chapter 69 Compact Double-Gate MOSFET Model Correctly Predicting Volume-Inversion Effects
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    Chapter 70 Modeling NAND Flash Memories for Circuit Simulations
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    Chapter 71 Surface-Potential-Based Compact Model for Quantum Effects in Planar and Double-Gate MOSFET
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    Chapter 72 Statistical Compact Model Parameter Extraction Strategy for Intrinsic Parameter Fluctuation
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    Chapter 73 Calibrated Hydrodynamic Simulation of Deeply-Scaled Well-Tempered Nanowire Field Effect Transistors
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    Chapter 74 The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs
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    Chapter 75 Monte Carlo Modeling of Schottky Contacts on Semiconducting Carbon Nanotubes
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    Chapter 76 Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions
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    Chapter 77 A Simplified Quantum Mechanical Model for the Electron Distribution in a Si Nanowire
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    Chapter 78 Efficient Green’s Function Algorithms for Atomistic Modeling of Si Nanowire FETs
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    Chapter 79 Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter
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    Chapter 80 Maxwell Equations on Unstructured Grids Using Finite-Integration Methods
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    Chapter 81 Adaptive Time Discretization for a Transient Quantum Drift-Diffusion Model
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    Chapter 82 MDS — A New, Highly Extensible Device Simulator
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    Chapter 83 Influence of the Poole-Frenkel Effect on Programming and Erasing in Charge Trapping Memories
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    Chapter 84 On the Magnetic Field Extraction for On-Chip Inductance Calculation
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    Chapter 85 EMC Simulation of THz Emission from Semiconductor Devices
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    Chapter 86 Enhanced Band-to-Band Tunneling-Induced-Hot-Electron Injection in P-Channel Flash by SiGe Channel and HfO 2 Tunnel Dielectric
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    Chapter 87 Challenges in 3D Process Simulation for Advanced Technology Understanding
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    Chapter 88 Characteristic Fluctuation Dependence on Discrete Dopant for 16nm SOI FinFETs at Different Temperature
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    Chapter 89 Hot-Carrier Behaviour of a 0.35 µm High-Voltage n-Channel LDMOS Transistor
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    Chapter 90 Dynamic Monte Carlo Simulation of an Amorphous Organic Device
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    Chapter 91 Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation
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    Chapter 92 Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors
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    Chapter 93 Analysis of Process-Geometry Modulations through 3D TCAD
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    Chapter 94 Asymmetrical Triple-Gate FET
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    Chapter 95 Process Variation-A ware Estimation of Static Leakage Power in Nano CMOS
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    Chapter 96 The Optimization of Low Power Operation SRAM Circuit for 32nm Node
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    Chapter 97 Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation
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    Chapter 98 Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On-Resistance vs. Overlap Capacitance in (100) and (110)-Oriented MOSFETs
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    Chapter 99 Molecular Orbital Examination of Negative-Bias Temperature Instability Mechanism
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    Chapter 100 Process Margin Analysis and Yield Enhancement Through Statistical Topography Simulation
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    Chapter 101 Simulation of Semiconductor Processes and Devices 2007
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    Chapter 102 Strained Contact Etch Stop Layer Integration: Geometry Design Impact
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    Chapter 103 Modeling of Deposition During C 5 F 8 /CO/O 2 /Ar Plasma Etching Using Topography and Composition Simulation
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    Chapter 104 Ab Initio Calculations of the Transport Through Single Molecules and Carbon Nanotubes
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    Chapter 105 Three-Dimensional Sacrificial Etching
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    Chapter 106 Atomistic study of Metal/High-K interface
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    Chapter 107 Ab-Initio Calculations of Indium Migration in Uniaxial Strained Silicon
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    Chapter 108 Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green’s Function Formalism
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    Chapter 109 RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices
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Title
Simulation of Semiconductor Processes and Devices 2007
Published by
Springer Vienna, January 2007
DOI 10.1007/978-3-211-72861-1
ISBNs
978-3-21-172860-4, 978-3-21-172861-1
Editors

Grasser, Tibor, Selberherr, Siegfried

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 21 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Germany 1 5%
Austria 1 5%
Brazil 1 5%
Unknown 18 86%

Demographic breakdown

Readers by professional status Count As %
Researcher 7 33%
Student > Ph. D. Student 6 29%
Student > Master 3 14%
Student > Doctoral Student 1 5%
Lecturer 1 5%
Other 2 10%
Unknown 1 5%
Readers by discipline Count As %
Engineering 10 48%
Computer Science 4 19%
Materials Science 3 14%
Business, Management and Accounting 1 5%
Physics and Astronomy 1 5%
Other 0 0%
Unknown 2 10%