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Progress in SOI Structures and Devices Operating at Extreme Conditions

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Cover of 'Progress in SOI Structures and Devices Operating at Extreme Conditions'

Table of Contents

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    Book Overview
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    Chapter 1 Perspectives of Simox Technology
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    Chapter 2 MBE Growth of the top Layer in Si/YSZ/Si Structure
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    Chapter 3 SiCOI Structures. Technology and Characterization
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    Chapter 4 New SiC on Insulator Wafers Based on the Smart-Cut® Approach and their Potential Applications
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    Chapter 5 ELTRAN® (SOI-Epi Wafer™) Technology
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    Chapter 6 Low Dimension Properties of Nanostructures on Ultrathin Layers of Silicon Formed by Oxidation of Ion Cut SOI Wafers and Electron Lithography
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    Chapter 7 SOI For Harsh Environment Applications in the USA
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    Chapter 8 Performance and Reliability of Deep Submicron SOI Mosfets in a Wide Temperature Range
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    Chapter 9 Strategies for High Temperature Electronics
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    Chapter 10 Charge Carrier Injection and Trapping in the Buried Oxides of SOI Structures
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    Chapter 11 Cryogenic Investigations of SIMOX Buried Oxide Parameters
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    Chapter 12 Gate-All-Around Technology for Harsh Environment Applications
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    Chapter 13 Low-Noise High-Temperature SOI Analog Circuits
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    Chapter 14 Influence of γ- Radiation on Short Channel SOI-MOSFETs with Thin SiO 2 Films
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    Chapter 15 Radiation Effects in SOI Magnetic Sensitive Elements Under Different Radiation Conditions
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    Chapter 16 Similarity Relation for I-V Characteristics of FETs with different Channel Shape
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    Chapter 17 Laser-Recrystallized SOI Layers for Sensor Applications at Cryogenic Temperatures
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    Chapter 18 Characterization and Modeling of Advanced SOI Materials and Devices
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    Chapter 19 Modeling and Measurements of Generation and Recombination Currents in Thin-Film SOI Gated-Diodes
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    Chapter 20 Defect Creation Mechanisms Due to Hot-Carriers in 0.15 μm SIMOX MOSFETs
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    Chapter 21 Defects and their Electronic Properties in High-Pressure-Annealed SOI Structures Sliced by Hydrogen
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    Chapter 22 DC and AC Models of Partially-Depleted SOI MOSFETs in Weak Inversion
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    Chapter 23 On Scaling the Thin Film Si Thickness of SOI Substrates
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    Chapter 24 Oxidized Porous Silicon Based SOI: Untapped Resources
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    Chapter 25 Electron-Hole Pair Reversed Drift in SOI Structure
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    Chapter 26 A Novel Depleted Semi-Insulating Silicon Material for High Frequency Applications
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    Chapter 27 Self-Organizing Growth of Silicon Dot- and Wire-Like Microcrystals on Isolated Substrates
Overall attention for this book and its chapters
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1 patent

Citations

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6 Dimensions

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5 Mendeley
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Title
Progress in SOI Structures and Devices Operating at Extreme Conditions
Published by
Springer Netherlands, December 2012
DOI 10.1007/978-94-010-0339-1
ISBNs
978-1-4020-0576-3, 978-9-40-100339-1
Editors

Balestra, F., Nazarov, A., Lysenko, V. S.

View on publisher site
Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 5 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 5 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 2 40%
Student > Bachelor 2 40%
Lecturer > Senior Lecturer 1 20%
Readers by discipline Count As %
Engineering 3 60%
Materials Science 1 20%
Physics and Astronomy 1 20%

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