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Chapter title |
A Very Fast Three-Dimensional Impurity Profile Simulation Incorporating An Accumulated Diffusion Length and Its Application to the Design of Power MOSFETs
|
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Chapter number | 46 |
Book title |
Simulation of Semiconductor Devices and Processes
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Published by |
Springer, Vienna, January 1995
|
DOI | 10.1007/978-3-7091-6619-2_46 |
Book ISBNs |
978-3-70-917363-3, 978-3-70-916619-2
|
Authors |
Shiroo Kamohara, Masahiro Sugaya, Hitoshi Matsuo |