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Chapter title |
Interface Properties and Device Reliability of High Quality PECVD Oxide for MOS Applications
|
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Chapter number | 35 |
Book title |
The Physics and Chemistry of SiO 2 and the Si-SiO 2 Interface 2
|
Published by |
Springer, Boston, MA, January 1993
|
DOI | 10.1007/978-1-4899-1588-7_35 |
Book ISBNs |
978-1-4899-1590-0, 978-1-4899-1588-7
|
Authors |
L. K. Wang, C. C.-H. Hsu, W. Chang |