The floating body effect of a WSe 2 transistor with volatile memory performance
Article in Materials Horizons (July 2022)
The most recent citing publications are shown below. View all 4 publications that cite this research output on Dimensions.
A low power L-shaped gate bipolar impact ionization MOSFET based capacitorless one transistor dynamic random access memory cell
Article in Japanese Journal of Applied Physics (May 2021)
A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
Article in Discover Nano (October 2020)