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Neutron-Transmutation-Doped Silicon

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Cover of 'Neutron-Transmutation-Doped Silicon'

Table of Contents

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    Book Overview
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    Chapter 1 Neutron-Doped Silicon — A Market Review
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    Chapter 2 Large Scale Production of NTD Silicon in the United States
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    Chapter 3 Impact of Defects Formed in Neutron Transmutation Doping of Silicon on Device Performance
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    Chapter 4 Electrical Property Studies of Oxygen in Czochralski-Grown Neutron-Transmutation-Doped Silicon
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    Chapter 5 Impurity Interactions with Structural Defects in Irradiated Silicon
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    Chapter 6 Defect Production During Neutron Doping of Si
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    Chapter 7 Wafer Stability. A Comparison of NTD-Silicon with Conventional FZ
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    Chapter 8 Electron Spin Resonance (ESR) Study on the Thermal Annealing of Defects Induced in Neutron Transmutation Doped Silicon
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    Chapter 9 Optical Studies of Lattice Damage in Neutron-Transmutation-Doped Silicon
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    Chapter 10 A Facility and Program at IPNS to Study Defects Produced by Fast Neutrons in Semiconductors
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    Chapter 11 Defects in Neutron-Irradiated Extrinsic P-Type Silicon
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    Chapter 12 The Health and Safety Aspects of Neutron Doped Silicon
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    Chapter 13 Precision and Accuracy of NTD Silicon Production Based on Calorimetric Neutron Dose Control
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    Chapter 14 The Selection of Starting Material for Neutron-Transmutation Doped Silicon
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    Chapter 15 The Optimisation of Nuclear Parameters Used for Silicon Irradiation in the Harwell Research Reactors
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    Chapter 16 Factors Affecting Phosphorus Production Rate in NTD Silicon
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    Chapter 17 Neutron Doped Silicon in Grenoble Reactor Facilities
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    Chapter 18 Characterization of NTD Silicon Irradiated in Grenoble Reactor Facilities
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    Chapter 19 A Preliminary Study on NTD-Silicon
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    Chapter 20 Development of the Irradiation Facilities for Silicon Neutron Doping in France
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    Chapter 21 Neutron Transmutation Doping of Silicon Slices
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    Chapter 22 Characterization of Unijunction Transistors Fabricated on NTD-Silicon
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    Chapter 23 NTD Silicon Behaviour during Diffusion Heat Treatment and High Power Devices Optimisation
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    Chapter 24 An Optimization of Blocking Characteristics of High Voltage Thyristors Using NTD Crystal
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    Chapter 25 The Fabrication and Characterization of Spreading Resistance Temperature Sensors Using NTD Silicon
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    Chapter 26 Characterization of NTD Silicon Crystals by the Photoluminescence Technique
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    Chapter 27 Precision Resistivity Measurements on NTD-Silicon
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    Chapter 28 Photoluminescence Analysis of NTD-Silicon
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    Chapter 29 Quantitative Determination of B and P in Silicon by IR Spectroscopy
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    Chapter 30 Extrinsic NTD Silicon for Infrared Applications
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    Chapter 31 Impurity Doping and Isolation Processing by High Energy Electron Beam
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    Chapter 32 Application of NTD Silicon for Radiation Detector of Surface Barrier Type
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    Chapter 33 Neutron Transmutation Doping of GaAs
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Title
Neutron-Transmutation-Doped Silicon
Published by
Springer US, November 2013
DOI 10.1007/978-1-4613-3261-9
ISBNs
978-1-4613-3263-3, 978-1-4613-3261-9
Editors

Guldberg, Jens

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 4 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 4 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 1 25%
Unknown 3 75%
Readers by discipline Count As %
Physics and Astronomy 1 25%
Unknown 3 75%