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Thin Films and Heterostructures for Oxide Electronics

Overview of attention for book
Attention for Chapter 4: Materials Requirements for Magnetic Random-Access Memory (MRAM) Devices
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Citations

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Chapter title
Materials Requirements for Magnetic Random-Access Memory (MRAM) Devices
Chapter number 4
Book title
Thin Films and Heterostructures for Oxide Electronics
Published by
Springer, Boston, MA, January 2005
DOI 10.1007/0-387-26089-7_4
Book ISBNs
978-0-387-25802-7, 978-0-387-26089-1
Authors

Wolfgang Raberg, Arunava Gupta

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 16 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Netherlands 1 6%
Unknown 15 94%

Demographic breakdown

Readers by professional status Count As %
Researcher 8 50%
Student > Ph. D. Student 2 13%
Student > Master 2 13%
Other 1 6%
Unknown 3 19%
Readers by discipline Count As %
Physics and Astronomy 8 50%
Materials Science 4 25%
Engineering 2 13%
Unknown 2 13%