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Materials for Information Technology

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Cover of 'Materials for Information Technology'

Table of Contents

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    Book Overview
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    Chapter 1 Molecular-beam Deposition of High-k Gate Dielectrics for Advanced CMOS
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    Chapter 2 LEPECVD — A Production Technique for SiGe MOSFETs and MODFETs
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    Chapter 3 Thin-film Engineering by Atomic-layer Deposition for Ultra-scaled and Novel Devices
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    Chapter 4 Atomic-layer Deposited Barrier and Seed Layers for Interconnects
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    Chapter 5 Copper CVD for Conformal Ultrathin-film Deposition
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    Chapter 6 Pushing PVD to the Limits — Recent Advances
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    Chapter 7 Surface Engineering Using Self-assembled Monolayers: Model Substrates for Atomic-layer Deposition
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    Chapter 8 Selective Airgaps: Towards a Scalable Low-k Solution
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    Chapter 9 Silicides — Recent Advances and Prospects
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    Chapter 10 TEM Characterization of Strained Silicon
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    Chapter 11 An Introduction to Nonvolatile Memory Technology
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    Chapter 12 Floating-dot Memory Transistors on SOI Substrate
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    Chapter 13 Ion-beam Synthesis of Nanocrystals for Multidot Memory Structures
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    Chapter 14 Scaling of Ferroelectric-based Memory Concepts
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    Chapter 15 Device Concepts with Magnetic Tunnel Junctions
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    Chapter 16 Phase-change Memories
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    Chapter 17 Amorphous-to- fcc Transition in GeSbTe Alloys
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    Chapter 18 Organic Nonvolatile Memories
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    Chapter 19 Interconnect Technology — Today, Recent Advances and a Look into the Future
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    Chapter 20 Dielectric and Scaling Effects on Electromigration for Cu Interconnects
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    Chapter 21 Texture and Stress Study of Sub-Micron Copper Interconnect Lines Using X-ray Microdiffraction
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    Chapter 22 Stress Modeling for Copper Interconnect Structures
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    Chapter 23 Conductivity Enhancement in Metallization Structures of Regular Grains
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    Chapter 24 Advanced Barriers for Copper Interconnects
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    Chapter 25 Synthesis and Characterization of Compounds Obtained by Crosslinking of Polymethylhydrosiloxane by Aromatic Rings
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    Chapter 26 Revealing the Porous Structure of Low-k Materials Through Solvent Diffusion
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    Chapter 27 Carbon Nanotube Via Technologies for Future LSI Interconnects
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    Chapter 28 Nickel Nanowires Obtained by Template Synthesis
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    Chapter 29 The Importance of Polymers in Wafer-Level Packaging
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    Chapter 30 Electrically Conductive Adhesives as Solder Alternative: A Feasible Challenge
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    Chapter 31 The Role of Au/Sn Solder in Packaging
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    Chapter 32 Packaging Materials: Organic-Inorganic Hybrids for Millimetre-Wave Optoelectronics
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    Chapter 33 Wafer-Level Three-Dimensional Hyper-Integration Technology Using Dielectric Adhesive Wafer Bonding
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    Chapter 34 Challenges to Advanced Materials Characterization for ULSI Applications
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    Chapter 35 Advanced Material Characterization by TOFSIMS in Microelectronic
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    Chapter 36 Electronic Properties of the Interface Formed by Pr 2 O 3 Growth on Si(001), Si(111) and SiC(0001) Surfaces
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    Chapter 37 Materials Characterization by Ellipsometry
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    Chapter 38 Thermal Desorption Spectrometry as a Method of Analysis for Advanced Interconnect Materials
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    Chapter 39 Electron Backscatter Diffraction: Application to Cu Interconnects in Top-View and Cross Section
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    Chapter 40 X-ray Reflectivity Characterisation of Thin-Film and Multilayer Structures
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Title
Materials for Information Technology
Published by
Springer London, July 2006
DOI 10.1007/1-84628-235-7
ISBNs
978-1-85233-941-8, 978-1-84628-235-5
Editors

Zschech, Ehrenfried, Whelan, Caroline, Mikolajick, Thomas

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 20 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Germany 1 5%
Unknown 19 95%

Demographic breakdown

Readers by professional status Count As %
Researcher 7 35%
Student > Ph. D. Student 4 20%
Student > Master 3 15%
Student > Doctoral Student 2 10%
Other 1 5%
Other 3 15%
Readers by discipline Count As %
Materials Science 7 35%
Unspecified 3 15%
Physics and Astronomy 3 15%
Engineering 3 15%
Chemistry 3 15%
Other 1 5%