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Wide Band Gap Electronic Materials

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Cover of 'Wide Band Gap Electronic Materials'

Table of Contents

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    Book Overview
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    Chapter 1 Problems of n-type Diamond Doping. Forced Methods of Doping
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    Chapter 2 Diffusion of Boron, Hydrogen, Oxygen and Lithium in Single Crystalline and Polycrystalline Diamond. A Novel Method for the Determination of the State of an Impurity: Forced Diffusion of Boron in IA Type Natural Diamond
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    Chapter 3 Chemical Aspects of Diamond Doping
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    Chapter 4 Diamond Growth by Hot Carbon Filament Chemical Vapor Deposition
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    Chapter 5 Diamond Particles on Silicon Tips: Preparation, Structure, and Field Emission Properties
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    Chapter 6 To the Question of the Diamond Nuclei’s Formation from the Gas Phase
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    Chapter 7 Electrically and Optically Active Impurities and Defects in Diamond
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    Chapter 8 Prediction of Diamond Film Thermal Conductivity
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    Chapter 9 Spectral Hole-Burning Study of the Defects Created by Neutron Irradiation in a Natural Diamond
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    Chapter 10 Calculations of Phosphorous Electronic Levels in Diamond
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    Chapter 11 Hydrogen Chemistry on Diamond Surfaces
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    Chapter 12 Surface and Bulk Conductivity of Hydrogen Treated Polycrystalline Diamond
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    Chapter 13 Positron Annihilation in Diamond Films
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    Chapter 14 ESR Study of the Paramagnetic Defects in Free Standing Diamond Films
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    Chapter 15 Efficient Reduction of Nitride and Nitrate to Ammonia Using B-Doped Diamond Electrodes
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    Chapter 16 Electronic and Sensing Properties of Diamond
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    Chapter 17 Diamond MIS Capacitors with Silicon Dioxide Dielectric
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    Chapter 18 Diamond Photovoltaics: Characterization of CVD Diamond Film-Based Heterostructures for Light to Electricity Conversion
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    Chapter 19 Laser Modes in Diamond
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    Chapter 20 Advanced Applications of Diamond Electronics
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    Chapter 21 Laser-Assisted Chemical Etching of Diamond Films in Oxygen
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    Chapter 22 Ion Milling of Polycrystalline Diamond Films
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    Chapter 23 Doping of Diamond-Like Carbon Films
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    Chapter 24 Unhydrogenated DLC Films Obtained by Magnetron Sputtering
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    Chapter 25 Simulation of Diffusion in an Amorphous Structure
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    Chapter 26 Optical and Electrical Properties of Quantum-Dimensional Multilayer Structures Based on Carbon FLLMS
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    Chapter 27 Thermal Stability and Structural Reactions at the Tantalum /a-C Interface under Vacuum Annealing Conditions
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    Chapter 28 Extended and Localized Electronic States in Tetrahedral Carbon Films
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    Chapter 29 Optical Properties of Sputtering and Glow Discharge a-C:H Films
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    Chapter 30 Application of Amorphous Hydrogenated Carbon Coating to Semiconductor Radiation Detectors
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    Chapter 31 Device for Growing and Doping in the Growth Process of Thin A1N Films
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    Chapter 32 Peculiarities of Chemical Vapor Heteroepitaxy of Wideband GAP III-V Nitrides
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    Chapter 33 The Peculiarities of Cubic Boron Nitride Formation Mechanism Using Hexa-Ammoniacate Boron Hydride of Magnesium
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    Chapter 34 Investigation of Cubic Boron Nitride Crystallization Processes in the BN-Li 3 N-(H, N) System
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    Chapter 35 Epitaxial Growth of A1N by Plasma Source Molecular Beam Epitaxy
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    Chapter 36 Electronic Structure and Related Properties of Tetrahedrally Bonded Wide-Band-Gap Materials Containing Early Elements of the Periodic Table
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    Chapter 37 Ion Implantation into Wide Band Gap Semiconductors
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    Chapter 38 Thermodynamic Properties of Boron Nitride
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    Chapter 39 Electrical Conductivity of Ceramics Based on Different Boron Nitride Modifications
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    Chapter 40 Cathodoluminescent Investigation of External Factors Influence on Defective Cubic Boron Nitride Structure
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    Chapter 41 Macro and Micro Structural Factors in Thin Film Growth of III-V Compounds
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    Chapter 42 The Features of the Sintering Process under High Pressure of Aluminium Nitride Ceramic with High Thermal Conductivity
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    Chapter 43 Reactive Ion Etching of Silicon Carbide with Fluorine-Containing Plasmas
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    Chapter 44 1.54-µm Photoluminescence from Er-Implanted A1N & GaN
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    Chapter 45 AES-SIMS Analitical System for Composition Measurements of Wide Band Gap Semiconductors
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    Chapter 46 Positron Annihilation in Sintered Boron Nitride
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    Chapter 47 Wide Band Gap Electronic Devices
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    Chapter 48 Wide Band-Gap Photovoltaics
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    Chapter 49 Considerations in Further Development of Aluminum Nitride as a Material for Device Applications
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    Chapter 50 Theoretical Aspects of Aluminium Nitride and Diamond in View of Laser and Photovoltaic Action
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Title
Wide Band Gap Electronic Materials
Published by
Springer Netherlands, December 2012
DOI 10.1007/978-94-011-0173-8
ISBNs
978-9-40-104078-5, 978-9-40-110173-8
Editors

Prelas, Mark A., Gielisse, Peter, Popovici, Galina, Spitsyn, Boris V., Stacy, Tina

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 20 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 20 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 6 30%
Researcher 4 20%
Student > Doctoral Student 3 15%
Other 3 15%
Student > Master 1 5%
Other 0 0%
Unknown 3 15%
Readers by discipline Count As %
Physics and Astronomy 10 50%
Materials Science 4 20%
Energy 1 5%
Engineering 1 5%
Unknown 4 20%