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Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

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Attention for Chapter 4: Negative Bias Temperature Instability in (Si)Ge pMOSFETs
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Chapter title
Negative Bias Temperature Instability in (Si)Ge pMOSFETs
Chapter number 4
Book title
Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
Published by
Springer, Dordrecht, January 2014
DOI 10.1007/978-94-007-7663-0_4
Book ISBNs
978-9-40-077662-3, 978-9-40-077663-0
Authors

Jacopo Franco, Ben Kaczer, Guido Groeseneken