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Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer

Overview of attention for article published in Discover Nano, January 2019
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Title
Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer
Published in
Discover Nano, January 2019
DOI 10.1186/s11671-019-2866-5
Pubmed ID
Authors

Zhuo Wang, Zhangyi’an Yuan, Xin Zhou, Ming Qiao, Zhaoji Li, Bo Zhang

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 9 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 9 100%

Demographic breakdown

Readers by professional status Count As %
Student > Bachelor 2 22%
Student > Doctoral Student 2 22%
Student > Ph. D. Student 1 11%
Student > Master 1 11%
Unknown 3 33%
Readers by discipline Count As %
Engineering 3 33%
Medicine and Dentistry 1 11%
Materials Science 1 11%
Unknown 4 44%