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Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−xClx Film with Potassium Chloride Additives

Overview of attention for article published in Discover Nano, June 2020
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Title
Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−xClx Film with Potassium Chloride Additives
Published in
Discover Nano, June 2020
DOI 10.1186/s11671-020-03356-3
Pubmed ID
Authors

Fengzhen Lv, Kang Ling, Tingting Zhong, Fuchi Liu, Xiaoguang Liang, Changming Zhu, Jun Liu, Wenjie Kong

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 14 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 14 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 2 14%
Student > Master 2 14%
Student > Doctoral Student 2 14%
Researcher 1 7%
Unknown 7 50%
Readers by discipline Count As %
Physics and Astronomy 3 21%
Materials Science 2 14%
Psychology 1 7%
Chemistry 1 7%
Medicine and Dentistry 1 7%
Other 0 0%
Unknown 6 43%