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Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device

Overview of attention for article published in Discover Nano, January 2020
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Title
Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device
Published in
Discover Nano, January 2020
DOI 10.1186/s11671-020-3249-7
Pubmed ID
Authors

Nasir Ilyas, Dongyang Li, Chunmei Li, Xiangdong Jiang, Yadong Jiang, Wei Li

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 97 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 97 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 17 18%
Student > Master 11 11%
Student > Doctoral Student 8 8%
Researcher 6 6%
Unspecified 6 6%
Other 10 10%
Unknown 39 40%
Readers by discipline Count As %
Engineering 20 21%
Materials Science 15 15%
Physics and Astronomy 7 7%
Unspecified 6 6%
Energy 2 2%
Other 4 4%
Unknown 43 44%