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Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

Overview of attention for article published in Discover Nano, February 2017
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Title
Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors
Published in
Discover Nano, February 2017
DOI 10.1186/s11671-017-1908-0
Pubmed ID
Authors

Guilei Wang, Jun Luo, Changliang Qin, Renrong Liang, Yefeng Xu, Jinbiao Liu, Junfeng Li, Huaxiang Yin, Jiang Yan, Huilong Zhu, Jun Xu, Chao Zhao, Henry H. Radamson, Tianchun Ye

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 13 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 13 100%

Demographic breakdown

Readers by professional status Count As %
Student > Master 3 23%
Professor 2 15%
Student > Doctoral Student 1 8%
Student > Ph. D. Student 1 8%
Student > Bachelor 1 8%
Other 2 15%
Unknown 3 23%
Readers by discipline Count As %
Engineering 6 46%
Materials Science 3 23%
Physics and Astronomy 1 8%
Unknown 3 23%