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GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

Overview of attention for article published in Discover Nano, August 2015
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Title
GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
Published in
Discover Nano, August 2015
DOI 10.1186/s11671-015-1049-2
Pubmed ID
Authors

Siming Chen, Wei Li, Ziyang Zhang, David Childs, Kejia Zhou, Jonathan Orchard, Ken Kennedy, Maxime Hugues, Edmund Clarke, Ian Ross, Osamu Wada, Richard Hogg

Abstract

A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from higher order optical transition from the QW in a hybrid QW/QD structure. This additional emission broadening method contributes significantly to obtaining a 3-dB linewidth of 290 nm centered at 1200 nm, with 2.4 mW at room temperature.

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 15 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 15 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 5 33%
Other 2 13%
Researcher 2 13%
Student > Master 2 13%
Student > Doctoral Student 1 7%
Other 0 0%
Unknown 3 20%
Readers by discipline Count As %
Physics and Astronomy 7 47%
Materials Science 2 13%
Engineering 2 13%
Chemistry 1 7%
Unknown 3 20%