Title |
Formation mechanism of SiGe nanorod arrays by combining nanosphere lithography and Au-assisted chemical etching
|
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Published in |
Discover Nano, February 2012
|
DOI | 10.1186/1556-276x-7-140 |
Pubmed ID | |
Authors |
Chih-Chung Lai, Yun-Ju Lee, Ping-Hung Yeh, Sheng-Wei Lee |
Abstract |
The formation mechanism of SiGe nanorod (NR) arrays fabricated by combining nanosphere lithography and Au-assisted chemical etching has been investigated. By precisely controlling the etching rate and time, the lengths of SiGe NRs can be tuned from 300 nm to 1 μm. The morphologies of SiGe NRs were found to change dramatically by varying the etching temperatures. We propose a mechanism involving a locally temperature-sensitive redox reaction to explain this strong temperature dependence of the morphologies of SiGe NRs. At a lower etching temperature, both corrosion reaction and Au-assisted etching process were kinetically impeded, whereas at a higher temperature, Au-assisted anisotropic etching dominated the formation of SiGe NRs. With transmission electron microscopy and scanning electron microscopy analyses, this study provides a beneficial scheme to design and fabricate low-dimensional SiGe-based nanostructures for possible applications. |
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Demographic breakdown
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