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Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices

Overview of attention for article published in Discover Nano, October 2014
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Citations

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41 Mendeley
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Title
Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices
Published in
Discover Nano, October 2014
DOI 10.1186/1556-276x-9-552
Pubmed ID
Authors

Iulia Salaoru, Qingjiang Li, Ali Khiat, Themistoklis Prodromakis

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 41 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Germany 1 2%
Unknown 40 98%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 16 39%
Student > Master 6 15%
Researcher 5 12%
Student > Bachelor 3 7%
Student > Postgraduate 3 7%
Other 3 7%
Unknown 5 12%
Readers by discipline Count As %
Engineering 12 29%
Physics and Astronomy 12 29%
Materials Science 7 17%
Chemistry 2 5%
Computer Science 1 2%
Other 1 2%
Unknown 6 15%