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Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Overview of attention for article published in Discover Nano, March 2015
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Title
Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling
Published in
Discover Nano, March 2015
DOI 10.1186/s11671-015-0826-2
Pubmed ID
Authors

Eun-Hye Lee, Jin-Dong Song, Il-Ki Han, Soo-Kyung Chang, Fabian Langer, Sven Höfling, Alfred Forchel, Martin Kamp, Jong-Su Kim

Abstract

The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm(2)), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 9 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
United Kingdom 1 11%
Unknown 8 89%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 2 22%
Other 1 11%
Student > Master 1 11%
Professor > Associate Professor 1 11%
Student > Postgraduate 1 11%
Other 0 0%
Unknown 3 33%
Readers by discipline Count As %
Physics and Astronomy 3 33%
Engineering 3 33%
Unknown 3 33%