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Mendeley readers
| Title |
Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
|
|---|---|
| Published in |
Discover Nano, December 2011
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| DOI | 10.1186/1556-276x-6-635 |
| Pubmed ID | |
| Authors |
Jianxin Chen, Qingqing Xu, Yi Zhou, Jupeng Jin, Chun Lin, Li He |
| Abstract |
We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10-4. The full width at half maximum of the first-order satellite peak from X-ray diffraction is 28 arc sec. The P-I-N photodiodes in which the absorption regions (I regions) have 600 periods of superlattice show a 50% cutoff wavelength of 4.3 μm. The current responsivity was measured at 0.48 A/W from blackbody radiation. The peak detectivity of 1.75 × 1011 cmHz1/2/W and the quantum efficiency of 41% at 3.6 μm were obtained.PACS: 85.60.-q; 85.60.Gz; 85.35.-Be. |
Mendeley readers
The data shown below were compiled from readership statistics for 20 Mendeley readers of this research output. Click here to see the associated Mendeley record.
Geographical breakdown
| Country | Count | As % |
|---|---|---|
| United Kingdom | 1 | 5% |
| Unknown | 19 | 95% |
Demographic breakdown
| Readers by professional status | Count | As % |
|---|---|---|
| Researcher | 6 | 30% |
| Student > Ph. D. Student | 4 | 20% |
| Student > Doctoral Student | 3 | 15% |
| Other | 1 | 5% |
| Student > Master | 1 | 5% |
| Other | 1 | 5% |
| Unknown | 4 | 20% |
| Readers by discipline | Count | As % |
|---|---|---|
| Engineering | 9 | 45% |
| Physics and Astronomy | 4 | 20% |
| Materials Science | 2 | 10% |
| Unknown | 5 | 25% |