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Optical characterisation of silicon nanocrystals embedded in SiO2/Si3N4 hybrid matrix for third generation photovoltaics

Overview of attention for article published in Discover Nano, December 2011
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Title
Optical characterisation of silicon nanocrystals embedded in SiO2/Si3N4 hybrid matrix for third generation photovoltaics
Published in
Discover Nano, December 2011
DOI 10.1186/1556-276x-6-612
Pubmed ID
Authors

Dawei Di, Heli Xu, Ivan Perez-Wurfl, Martin A Green, Gavin Conibeer

Abstract

Silicon nanocrystals with an average size of approximately 4 nm dispersed in SiO2/Si3N4 hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical band gap are extracted from interference-minimised absorption and luminescence spectra. Measurement results suggest that these nanocrystals exhibit transitions of both direct and indirect types. Possible mechanisms of absorption and emission as well as an estimation of exciton binding energy are also discussed.

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 29 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Germany 1 3%
Unknown 28 97%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 6 21%
Researcher 6 21%
Student > Master 4 14%
Student > Bachelor 2 7%
Professor 2 7%
Other 4 14%
Unknown 5 17%
Readers by discipline Count As %
Physics and Astronomy 7 24%
Materials Science 5 17%
Energy 3 10%
Engineering 3 10%
Social Sciences 2 7%
Other 3 10%
Unknown 6 21%