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Mendeley readers
| Title |
Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells
|
|---|---|
| Published in |
Discover Nano, November 2011
|
| DOI | 10.1186/1556-276x-6-599 |
| Pubmed ID | |
| Authors |
Xianwen Sun, Guoqiang Li, Li Chen, Zihong Shi, Weifeng Zhang |
| Abstract |
Two types of bipolar resistance switching with eightwise and counter eightwise polarities are observed to coexist in Au/SrTiO3/Ti memory cells. These two types of switching can be induced by different defect distributions which are activated by controlling the electric process. The analyses of I-V and C-V data reveal that the resistance switching with eightwise polarity originates from the change of Schottky barrier at the Au/SrTiO3 interface caused by trapping/detrapping effects at interface defect states, while the switching with counter eightwise polarity is caused by oxygen-vacancy migration. |
Mendeley readers
The data shown below were compiled from readership statistics for 50 Mendeley readers of this research output. Click here to see the associated Mendeley record.
Geographical breakdown
| Country | Count | As % |
|---|---|---|
| India | 1 | 2% |
| China | 1 | 2% |
| Germany | 1 | 2% |
| Unknown | 47 | 94% |
Demographic breakdown
| Readers by professional status | Count | As % |
|---|---|---|
| Student > Ph. D. Student | 14 | 28% |
| Researcher | 12 | 24% |
| Student > Master | 7 | 14% |
| Student > Bachelor | 3 | 6% |
| Student > Postgraduate | 2 | 4% |
| Other | 6 | 12% |
| Unknown | 6 | 12% |
| Readers by discipline | Count | As % |
|---|---|---|
| Physics and Astronomy | 13 | 26% |
| Materials Science | 9 | 18% |
| Engineering | 8 | 16% |
| Agricultural and Biological Sciences | 4 | 8% |
| Chemistry | 2 | 4% |
| Other | 6 | 12% |
| Unknown | 8 | 16% |