Title |
Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties
|
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Published in |
Discover Nano, July 2015
|
DOI | 10.1186/s11671-015-0976-2 |
Pubmed ID | |
Authors |
Duyoung Choi, Cihan Kuru, Youngjin Kim, Gunwoo Kim, Taekyoung Kim, Renkun Chen, Sungho Jin |
Abstract |
We have successfully fabricated and characterized highly uniform nanopatterned graphene (NPG). Thin anodized aluminum oxide nanomask was prepared by facile self-assembly technique without using polymer buffer layer, which was utilized as a direct-contact template for oxygen plasma etch to produce near-periodic, small-neck-width NPG. The NPG exhibits a homogeneous mesh structure with an average neck width as small as ~11 nm. The highly uniform 11-nm neck width creates a quantum confinement in NPG, which has led to a record bandgap opening of ~200 meV in graphene for the given level of neck width. Electronic characterization of single-layer NPG field-effect transistors (FETs) was performed, which demonstrated a high on-off switching ratio. We found that the NPG allows for experimental confirmation of the relationship between electrical conductance and bandgap. This work also demonstrates that our direct-contact, self-assembled mask lithography is a pathway for low-cost, high-throughput, large-scale nanomanufacturing of graphene nanodevices. |
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