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Optical properties and bandgap evolution of ALD HfSiOx films

Overview of attention for article published in Discover Nano, February 2015
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Title
Optical properties and bandgap evolution of ALD HfSiOx films
Published in
Discover Nano, February 2015
DOI 10.1186/s11671-014-0724-z
Pubmed ID
Authors

Wen Yang, Michael Fronk, Yang Geng, Lin Chen, Qing-Qing Sun, Ovidiu D Gordan, Peng zhou, Dietrich RT Zahn, David Wei Zhang

Abstract

Hafnium silicate films with pure HfO2 and SiO2 samples as references were fabricated by atomic layer deposition (ALD) in this work. The optical properties of the films as a function of the film composition were measured by vacuum ultraviolet (VUV) ellipsometer in the energy range of 0.6 to 8.5 eV, and they were investigated systematically based on the Gaussian dispersion model. Experimental results show that optical constants and bandgap of the hafnium silicate films can be tuned by the film composition, and a nonlinear change behavior of bandgap with SiO2 fraction was observed. This phenomenon mainly originates from the intermixture of d-state electrons in HfO2 and Si-O antibonding states in SiO2.

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 20 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Mexico 1 5%
Unknown 19 95%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 6 30%
Student > Doctoral Student 4 20%
Student > Master 1 5%
Researcher 1 5%
Student > Postgraduate 1 5%
Other 0 0%
Unknown 7 35%
Readers by discipline Count As %
Engineering 5 25%
Materials Science 5 25%
Physics and Astronomy 2 10%
Chemical Engineering 1 5%
Agricultural and Biological Sciences 1 5%
Other 0 0%
Unknown 6 30%