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Nano-Optoelectronics

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Cover of 'Nano-Optoelectronics'

Table of Contents

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    Book Overview
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    Chapter 1 The History of Heterostructure Lasers
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    Chapter 2 Stress-Engineered Quantum Dots: Nature’s Way
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    Chapter 3 Characterization of Structure and Composition of Quantum Dots by Transmission Electron Microscopy
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    Chapter 4 Scanning Tunneling Microscopy Characterization of InAs Nanostructures Formed on GaAs(001)
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    Chapter 5 Cross-sectional Scanning Tunneling Microscopy at InAs Quantum Dots
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    Chapter 6 X-ray Characterization of Group III-Nitrides (Al,In,Ga)N
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    Chapter 7 Theory of the Electronic and Optical Properties of InGaAs/GaAs Quantum Dots
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    Chapter 8 Magneto-Tunneling Spectroscopy of Self-Assembled InAs Quantum Dots
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    Chapter 9 Modulation Spectroscopy and Surface Photovoltage Spectroscopy of Semiconductor Quantum Wires and Quantum Dots
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    Chapter 10 Optical Properties of Self-Organized Quantum Dots
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    Chapter 11 High Occupancy Effects and Condensation Phenomena in Semiconductor Microcavities and Bulk Semiconductors
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    Chapter 12 Theory of Quantum Dot Lasers
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    Chapter 13 Long-Wavelength InGaAs/GaAs Quantum Dot Lasers
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    Chapter 14 InP/GaInP Quantum Dot Lasers
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    Chapter 15 High Power Quantum Dot Lasers
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    Chapter 16 Inter-Sublevel Transitions in Quantum Dots and Device Applications
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    Chapter 17 Progress in Growth and Physics of Nitride-Based Quantum Dots
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    Chapter 18 Ultrafast Optical Properties of Quantum Dot Amplifiers
Attention for Chapter 15: High Power Quantum Dot Lasers
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Chapter title
High Power Quantum Dot Lasers
Chapter number 15
Book title
Nano-Optoelectronics
Published by
Springer, Berlin, Heidelberg, January 2002
DOI 10.1007/978-3-642-56149-8_15
Book ISBNs
978-3-64-262807-8, 978-3-64-256149-8
Authors

Christian Ribbat, Roman Sellin, Ribbat, Christian, Sellin, Roman