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The Physics of Submicron Structures

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Cover of 'The Physics of Submicron Structures'

Table of Contents

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    Book Overview
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    Chapter 1 Quantum-Well and Superlattice Lasers: Fundamental Effects
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    Chapter 2 n-i-p-i Doping Superlattices-Semiconductors with Tunable Electronic Properties
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    Chapter 3 Tunneling Phenomena in Multibarrier Structures
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    Chapter 4 Enhancement of the Ionization Rates Ratio by Spatial Separation of Electrons and Holes in Multilayer Heterojunction Structures: Towards a Solid State Photomultiplier
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    Chapter 5 Two-Dimensional Electron Gas Fet (TEGFET)
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    Chapter 6 Physics and Modeling Considerations for VLSI Devices
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    Chapter 7 Design Considerations for Submicron-Scale GaAs MESFETs
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    Chapter 8 Millimeter Impatt Diodes
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    Chapter 9 A Dynamic Monte Carlo Simulation of Conduction in Submicron Gaas Devices at 77 K
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    Chapter 10 Monte Carlo Simulation of Electron Dynamics in Mos Inversion Channels
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    Chapter 11 Performance of Submicron Silicon MOSFETs Fabricated by Edge-Defined Vertical-Etch Technique
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    Chapter 12 Modeling of Surface Scattering in the Monte Carlo Simulation of Short Channel MOSFET
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    Chapter 13 Generation of Interface States and Charge Trapping in MOSFETs
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    Chapter 14 High Field Surface Drift Velocities in Silicon
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    Chapter 15 Phonons in Confined Geometries
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    Chapter 16 Monte Carlo Simulation of Space-Charge Injection Fet
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    Chapter 17 Ensemble Monte Carlo Studies of High Field Spikes and Planar Doped Barrier Devices
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    Chapter 18 Self-Consistent Particle-Field Monte Carlo Simulation of Semiconductor Microstructures
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    Chapter 19 Electron Distribution Function in GaAs for High and Low Electric Fields
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    Chapter 20 Monte Carlo Simulations of Ballistic Structures
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    Chapter 21 Noise Considerations in Submicron Devices
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    Chapter 22 Ballistic Transport and Velocity Overshoot in Photoconductive Submicron Structures
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    Chapter 23 Impact Ionization Coefficients in InP Determined by Analysis of Photocurrent and Noise Measurements
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    Chapter 24 Radiative Decay of Surface Plasmons on Nonspherical Silver Particles
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    Chapter 25 A Jet-Stream Solution for the Current in Planar-Doped-Barrier Devices
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    Chapter 26 The Validity of the Drift-Diffusion Equation in Small Semiconductor Devices
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    Chapter 27 High-Field Transport in GaAs, InP, and In x Ga 1-x As y P 1-y
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    Chapter 28 Proposal for a Terahertz Zener Oscillator
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    Chapter 29 Considerations on the Finite, Very-Small Semiconductor Device and Superlattice Arrays
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    Chapter 30 A Wigner Function Approach to Transport and Switching in Sub-Micron Heterostructures
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    Chapter 31 The Electron Diffusion Transistor (A Proposed New Transistor Structure)
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    Chapter 32 Point Contact Spectroscopy of Scattering Rates on Semiconductors
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    Chapter 33 Lateral Superlattices For MM-Wave and Microelectronic Applications
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    Chapter 34 Improved Device Physics for Calculating the Gain of Bipolar Structures in Silicon
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    Chapter 35 Generalized Semiconductor Device Modeling Based on Maxwell Theory and Stream Functions
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    Chapter 36 Low Field Mobility, Effective Saturation Velocity and Performance of Submicron GaAs MESFETs
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    Chapter 37 Multi-Layered Heterojunction Structure for Millimeter Wave Sources
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    Chapter 38 Boundary Scattering Effects in High Field Transport in Submicron Structures
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    Chapter 39 Ballistic and Dissipative Effects in Barrier-Limited Current Transport
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Title
The Physics of Submicron Structures
Published by
Springer US, December 2012
DOI 10.1007/978-1-4613-2777-6
ISBNs
978-1-4612-9714-7, 978-1-4613-2777-6
Editors

Grubin, H. L., Hess, K., Iafrate, G. J., Ferry, D. K.