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Ion Implantation: Equipment and Techniques

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Cover of 'Ion Implantation: Equipment and Techniques'

Table of Contents

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    Book Overview
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    Chapter 1 Physical Limitations of Ion Implantation Equipment
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    Chapter 2 A New Ion Implanter for Solar Cell Fabrication
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    Chapter 3 SURIM — A Westinghouse Surface Implantation Machine
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    Chapter 4 A New Research Implanter at the University of Surrey
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    Chapter 5 Radio Frequency Ion Accelerator
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    Chapter 6 Performance of the Bethge-Baumann Ion Source with Radio Frequency Operation
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    Chapter 7 Emittance Measurements on an Indirectly Heated Heavy-Ion Source
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    Chapter 8 A High-Brightness Duoplasmatron Ion Source
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    Chapter 9 Optimization of a Single-Aperture Extraction System for High-Current Ion Sources
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    Chapter 10 Development of a High-Current Ion Source for Non-Volatile Elements
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    Chapter 11 The Use of Computers for Designing and Testing Ion Beam Systems
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    Chapter 12 Multipole Ion Source for Ion Implantation and Isotope Separation
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    Chapter 13 An Ion Source for Semiconductor Implantation
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    Chapter 14 High Throughput Wafer Handling System for Serial Process Ion Implantation
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    Chapter 15 Comparison of Beam Scanning Systems
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    Chapter 16 A Low-Internal-Resistance and High-Precision High-Voltage Power Supply
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    Chapter 17 Electrostatic Switch Used for 600 kV Ion Implanter
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    Chapter 18 Automatic Wafer Handling for a Mechanically Scanned Ion Implanter
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    Chapter 19 On-Line Control of Production Ion Implanters Using Standard Desk Computers
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    Chapter 20 A Forty-Channel Optical-Fiber Telecommunication System for Manipulation of High-Voltage Terminals in Ion Implanters
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    Chapter 21 Low-Cost Analog Signal Fiber Link with 300 kV Isolation
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    Chapter 22 Improvements in the Vacuum System of a VDG Accelerator Used for Clean Ion Implantation
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    Chapter 23 High Temperature Implantation of Powders Using a Horizontal Ion Beam
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    Chapter 24 A Technique for Implanting Dopant Distributions in Solids
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    Chapter 25 Wafer Cooling and Photoresist Masking Problems in Ion Implantation
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    Chapter 26 Electron-Beam-Induced Recoil Implantation in Semiconductors at 300 K
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    Chapter 27 Wafer Cooling in Ion Implantation
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    Chapter 28 A Rotating Attenuator for Concentration Profiling of Implanted Helium Ions
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    Chapter 29 Ion-Beam Lithography
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    Chapter 30 Development Characteristics of Ga + Exposed PMMA and Associated Lithographic Resolution Limits
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    Chapter 31 Simulation of the Lithographic Properties of Ion-Beam Resists
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    Chapter 32 Deposition of Masking Films by Ion-Beam Induced Polymerization
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    Chapter 33 Dosimetry and Beam Quality
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    Chapter 34 A New Facility for Ion Beam Surface Analysis
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    Chapter 35 Non-Destructive Techniques for Measuring the Parameters of Low-Energy Continuous Ion Beams
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    Chapter 36 Investigation of the Lifetime of Photocurrent Carriers in Si During Ion Implantation
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    Chapter 37 A Mössbauer Spectrometer for in situ Low Temperature Studies of Ion-Bombarded Metals
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    Chapter 38 Background in ( n, p ) and ( n, α ) Spectrometry
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    Chapter 39 Monitoring of X-Y-Scan Quality by Amorphization Contrast on Silicon Wafers
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    Chapter 40 Techniques and Equipment for Implantation into Metals
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    Chapter 41 Nitriding of Steels: Conventional Processes and Ion Implantation
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    Chapter 42 Effect of Ion Mixing on the Wear Behaviour of Silver
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    Chapter 43 Methods to Control Target Heating During Ion Implantation
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    Chapter 44 New Applications of Ion Implantation in Silicon Processing
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    Chapter 45 Limitations of Ion Implantation in MOS Technology
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    Chapter 46 Implant Processes for Bipolar Product Manufacturing and Their Effects on Device Yield
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    Chapter 47 Buried Silicon-Nitride Layers Formed by Nitrogen-Ion Implantation and High-Temperature Annealing
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    Chapter 48 Combined Boron and Aluminum Implantation for High-Voltage Devices
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    Chapter 49 Deep Implanted Layers of Boron in Silicon
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    Chapter 50 Planar Channeling of Si Implants in GaAs
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    Chapter 51 Application of High-Current Ion-Implantation Systems in Semiconductor-Device Technology
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    Chapter 52 Implantation Doping of Germanium with Be, Mg, Zn, and B Ions
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    Chapter 53 Low Energy Implantation of Nitrogen and Ammonia into Silicon
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    Chapter 54 Doping Behavior of Implanted Magnesium in Silicon
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    Chapter 55 Beam Annealing of Ion-Implanted Silicon
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    Chapter 56 Radiation Annealing of Silicon-Implanted GaAs with a CW Xe Arc Lamp
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    Chapter 57 Pulse-Laser-Induced Epitaxial Regrowth of Ion-Implanted Semiconductors
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    Chapter 58 CO 2 Laser Annealing of Ion-Implanted Silicon: Relaxation Characteristics of Metastable Concentrations
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    Chapter 59 Rapid Isothermal Annealing for Semiconductor Applications: Aspects of Equipment Design
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    Chapter 60 Investigation of Polysilicon Implantation Under Thermal and Laser Annealing
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    Chapter 61 CW-CO 2 -Laser Alloying of Au-Ge-Ni Ohmic Contacts on GaAs
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    Chapter 62 Photoluminescence of Ion-Implanted Gallium Arsenide After Laser Annealing
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    Chapter 63 Channeling and High-Resolution Backscattering Studies of Laser-Annealed Low-Energy Arsenic-Implanted Silicon
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Title
Ion Implantation: Equipment and Techniques
Published by
Springer Berlin Heidelberg, December 2012
DOI 10.1007/978-3-642-69156-0
ISBNs
978-3-64-269158-4, 978-3-64-269156-0
Editors

Ryssel, Heiner, Glawischnig, Hans

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Mendeley readers

The data shown below were compiled from readership statistics for 1 Mendeley reader of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 1 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 1 100%
Readers by discipline Count As %
Physics and Astronomy 1 100%