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Technology of Gallium Nitride Crystal Growth

Overview of attention for book
Attention for Chapter 14: Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy
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Chapter title
Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy
Chapter number 14
Book title
Technology of Gallium Nitride Crystal Growth
Published in
ADS, January 2010
DOI 10.1007/978-3-642-04830-2_14
Book ISBNs
978-3-64-204828-9, 978-3-64-204830-2
Authors

Filip Tuomisto

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 6 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Hong Kong 1 17%
Poland 1 17%
Unknown 4 67%

Demographic breakdown

Readers by professional status Count As %
Researcher 3 50%
Student > Ph. D. Student 1 17%
Professor 1 17%
Unknown 1 17%
Readers by discipline Count As %
Materials Science 3 50%
Physics and Astronomy 2 33%
Unknown 1 17%