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Chapter title |
Effect of Annealing at Argon Pressure Up to 1.2 GPa on Hydrogen — Plasma Etched and Hydrogen — Implanted Single — Crystalline Silicon
|
---|---|
Chapter number | 43 |
Book title |
Hydrogen Materials Science and Chemistry of Metal Hydrides
|
Published by |
Springer, Dordrecht, January 2002
|
DOI | 10.1007/978-94-010-0558-6_43 |
Book ISBNs |
978-1-4020-0731-6, 978-9-40-100558-6
|
Authors |
A. Misiuk, J. Bk-Misiuk, A. Barcz, A. Romano-Rodriguez, I. V. Antonova, V. P. Popov, C. A. Londos, J. Jun |