Title |
SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system
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Published in |
Discover Nano, January 2012
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DOI | 10.1186/1556-276x-7-22 |
Pubmed ID | |
Authors |
Yeun-Ho Joung, Hyun Il Kang, Jung Hyun Kim, Hae-Seok Lee, Jaehyung Lee, Won Seok Choi |
Abstract |
In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement. |
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