Title |
Atomic scale investigation of silicon nanowires and nanoclusters
|
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Published in |
Discover Nano, March 2011
|
DOI | 10.1186/1556-276x-6-271 |
Pubmed ID | |
Authors |
Manuel Roussel, Wanghua Chen, Etienne Talbot, Rodrigue Lardé, Emmanuel Cadel, Fabrice Gourbilleau, Bruno Grandidier, Didier Stiévenard, Philippe Pareige |
Abstract |
In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers. |
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