Title |
Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
|
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Published in |
Discover Nano, February 2016
|
DOI | 10.1186/s11671-016-1272-5 |
Pubmed ID | |
Authors |
Kai-Huang Chen, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Shu-Ping Liang, Tai-Fa Young, Yong-En Syu, Simon M. Sze |
Abstract |
Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices. |
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