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Mendeley readers
| Title |
Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio
|
|---|---|
| Published in |
Discover Nano, November 2013
|
| DOI | 10.1186/1556-276x-8-483 |
| Pubmed ID | |
| Authors |
Hsin-Wei Huang, Chen-Fang Kang, Fang-I Lai, Jr-Hau He, Su-Jien Lin, Yu-Lun Chueh |
Mendeley readers
The data shown below were compiled from readership statistics for 46 Mendeley readers of this research output. Click here to see the associated Mendeley record.
Geographical breakdown
| Country | Count | As % |
|---|---|---|
| Taiwan | 1 | 2% |
| Unknown | 45 | 98% |
Demographic breakdown
| Readers by professional status | Count | As % |
|---|---|---|
| Student > Ph. D. Student | 16 | 35% |
| Student > Doctoral Student | 5 | 11% |
| Researcher | 5 | 11% |
| Student > Master | 4 | 9% |
| Other | 2 | 4% |
| Other | 4 | 9% |
| Unknown | 10 | 22% |
| Readers by discipline | Count | As % |
|---|---|---|
| Engineering | 13 | 28% |
| Materials Science | 10 | 22% |
| Physics and Astronomy | 6 | 13% |
| Social Sciences | 1 | 2% |
| Computer Science | 1 | 2% |
| Other | 2 | 4% |
| Unknown | 13 | 28% |