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Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires

Overview of attention for article published in Discover Nano, July 2014
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Title
Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
Published in
Discover Nano, July 2014
DOI 10.1186/1556-276x-9-358
Pubmed ID
Authors

Luca Persichetti, Anna Sgarlata, Stefano Mori, Marco Notarianni, Valeria Cherubini, Massimo Fanfoni, Nunzio Motta, Adalberto Balzarotti

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 13 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 13 100%

Demographic breakdown

Readers by professional status Count As %
Professor 4 31%
Student > Postgraduate 2 15%
Researcher 2 15%
Student > Doctoral Student 1 8%
Student > Ph. D. Student 1 8%
Other 0 0%
Unknown 3 23%
Readers by discipline Count As %
Materials Science 4 31%
Physics and Astronomy 3 23%
Engineering 2 15%
Unknown 4 31%