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HEMT Technology and Applications

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Cover of 'HEMT Technology and Applications'

Table of Contents

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    Book Overview
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    Chapter 1 Ultrawide Bandgap AlGaN-Channel-Based HEMTs for Next-Generation Electronics
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    Chapter 2 Breakdown Mechanisms and Scaling Technologies of AlGaN/GaN HEMTs
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    Chapter 3 Influence of Al2O3 Oxide Layer Thickness Variation on PZT Ferroelectric Al0.3Ga0.7N/AlN/GaN E-Mode GR-MOSHEMT
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    Chapter 4 Study of Different Transport Properties of MgZnO/ZnO and AlGaN/GaN High Electron Mobility Transistors: A Review
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    Chapter 5 Analytical Modeling of Electric Field and Breakdown Voltage Characteristics of AlInN/GaN HEMT with Field Plates
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    Chapter 6 Performance Analysis of HfO2 and Si3N4 Dielectrics in β-Ga2O3 HEMT
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    Chapter 7 3D Simulation Study of Laterally Gated AlN/β-Ga2O3 HEMT Technology for RF and High-Power Nanoelectronics
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    Chapter 8 Operation Principle of AlGaN/GaN HEMT
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    Chapter 9 Multigate MOS-HEMT
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    Chapter 10 Enhancement-Mode MOSHEMT
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    Chapter 11 Performance Analysis of AlGaN/GaN HEMT for RF and Microwave Nanoelectronics Applications
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    Chapter 12 High Electron Mobility Transistor: Physics-Based TCAD Simulation and Performance Analysis
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    Chapter 13 Emerging Device Architectures for Space Electronics
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    Chapter 14 Evolution and Present State-of-Art Gallium Oxide HEMTs–The Key Takeaways
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    Chapter 15 Linearity Analysis of AlN/β-Ga2O3 HEMT for RFIC Design
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    Chapter 16 HEMT for Biosensing Applications
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Title
HEMT Technology and Applications
Published by
Springer Nature Singapore, September 2022
DOI 10.1007/978-981-19-2165-0
ISBNs
978-9-81-192164-3, 978-9-81-192165-0
Editors

Lenka, Trupti Ranjan, Nguyen, Hieu Pham Trung