Title |
Resistive phase transition of the superconducting Si(111)-(7×3)-In surface
|
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Published in |
Discover Nano, April 2013
|
DOI | 10.1186/1556-276x-8-167 |
Pubmed ID | |
Authors |
Takashi Uchihashi, Puneet Mishra, Tomonobu Nakayama |
Abstract |
: Recently, superconductivity was found on semiconductor surface reconstructions induced by metal adatoms, promising a new field of research where superconductors can be studied from the atomic level. Here we measure the electron transport properties of the Si(111)-(7×3)-In surface near the resistive phase transition and analyze the data in terms of theories of two-dimensional (2D) superconductors. In the normal state, the sheet resistances (2D resistivities) R□ of the samples decrease significantly between 20 and 5 K, suggesting the importance of the electron-electron scattering in electron transport phenomena. The decrease in R□ is progressively accelerated just above the transition temperature (Tc) due to the direct (Aslamazov-Larkin term) and the indirect (Maki-Thompson term) superconducting fluctuation effects. A minute but finite resistance tail is found below Tc down to the lowest temperature of 1.8 K, which may be ascribed to a dissipation due to free vortex flow. The present study lays the ground for a future research aiming to find new superconductors in this class of materials. |
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