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The role of Si interstitials in the migration and growth of Ge nanocrystallites under thermal annealing in an oxidizing ambient

Overview of attention for article published in Discover Nano, July 2014
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Title
The role of Si interstitials in the migration and growth of Ge nanocrystallites under thermal annealing in an oxidizing ambient
Published in
Discover Nano, July 2014
DOI 10.1186/1556-276x-9-339
Pubmed ID
Authors

Kuan-Hung Chen, Ching-Chi Wang, Tom George, Pei-Wen Li

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Mendeley readers

The data shown below were compiled from readership statistics for 1 Mendeley reader of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Canada 1 100%

Demographic breakdown

Readers by professional status Count As %
Researcher 1 100%
Readers by discipline Count As %
Materials Science 1 100%