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Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

Overview of attention for article published in Discover Nano, August 2009
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Title
Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations
Published in
Discover Nano, August 2009
DOI 10.1007/s11671-009-9420-9
Pubmed ID
Authors

A Jallipalli, G Balakrishnan, SH Huang, TJ Rotter, K Nunna, BL Liang, LR Dawson, DL Huffaker

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 62 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
India 1 2%
United States 1 2%
China 1 2%
Germany 1 2%
Unknown 58 94%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 26 42%
Researcher 12 19%
Student > Doctoral Student 5 8%
Student > Master 5 8%
Professor > Associate Professor 3 5%
Other 3 5%
Unknown 8 13%
Readers by discipline Count As %
Engineering 19 31%
Materials Science 18 29%
Physics and Astronomy 8 13%
Chemistry 2 3%
Agricultural and Biological Sciences 1 2%
Other 0 0%
Unknown 14 23%