Title |
Blue light emission from the heterostructured ZnO/InGaN/GaN
|
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Published in |
Discover Nano, February 2013
|
DOI | 10.1186/1556-276x-8-99 |
Pubmed ID | |
Authors |
Ti Wang, Hao Wu, Zheng Wang, Chao Chen, Chang Liu |
Abstract |
ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias. |
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