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Recent Advances in PMOS Negative Bias Temperature Instability

Overview of attention for book
Attention for Chapter 9: BAT Framework Modeling of Gate First HKMG Si and SiGe Channel FDSOI MOSFETs
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Chapter title
BAT Framework Modeling of Gate First HKMG Si and SiGe Channel FDSOI MOSFETs
Chapter number 9
Book title
Recent Advances in PMOS Negative Bias Temperature Instability
Published by
Springer, Singapore, November 2021
DOI 10.1007/978-981-16-6120-4_9
Book ISBNs
978-9-81-166119-8, 978-9-81-166120-4
Authors

Parihar, Narendra, Samadder, Tarun, Choudhury, Nilotpal, Huard, Vincent, Mahapatra, Souvik

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Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 1 Mendeley reader of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 1 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 1 100%
Readers by discipline Count As %
Engineering 1 100%