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Recent Advances in PMOS Negative Bias Temperature Instability

Overview of attention for book
Recent Advances in PMOS Negative Bias Temperature Instability
Springer Singapore

Table of Contents

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    Book Overview
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    Chapter 1 Characterization of NBTI Parametric Drift
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    Chapter 2 Device Architecture, Material and Process Dependencies of NBTI Parametric Drift
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    Chapter 3 Physical Mechanism of NBTI Parametric Drift
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    Chapter 4 BTI Analysis Tool (BAT) Model Framework—Generation of Interface Traps
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    Chapter 5 BTI Analysis Tool (BAT) Model Framework—Interface Trap Occupancy and Hole Trapping
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    Chapter 6 BTI Analysis Tool (BAT) Model Framework—Generation of Bulk Traps
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    Chapter 7 BAT Framework Modeling of Gate First HKMG Si Channel MOSFETs
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    Chapter 8 BAT Framework Modeling of Gate First HKMG Si-Capped SiGe Channel MOSFETs
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    Chapter 9 BAT Framework Modeling of Gate First HKMG Si and SiGe Channel FDSOI MOSFETs
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    Chapter 10 BAT Framework Modeling of RMG HKMG SOI FinFETs
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    Chapter 11 BAT Framework Modeling of RMG HKMG Si and SiGe Channel FinFETs
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    Chapter 12 BAT Framework Modeling of RMG HKMG GAA-SNS FETs
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    Chapter 13 BAT Framework Modeling of Dimension Scaling in FinFETs and GAA-SNS FETs
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    Chapter 14 BAT Framework Modeling of AC NBTI: Stress Mode, Duty Cycle and Frequency
Attention for Chapter 7: BAT Framework Modeling of Gate First HKMG Si Channel MOSFETs
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Chapter title
BAT Framework Modeling of Gate First HKMG Si Channel MOSFETs
Chapter number 7
Book title
Recent Advances in PMOS Negative Bias Temperature Instability
Published by
Springer, Singapore, November 2021
DOI 10.1007/978-981-16-6120-4_7
Book ISBNs
978-9-81-166119-8, 978-9-81-166120-4
Authors

Mahapatra, Souvik, Parihar, Narendra, Goel, Nilesh, Choudhury, Nilotpal, Samadder, Tarun

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