Title |
GR-FET application for high-frequency detection device
|
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Published in |
Discover Nano, January 2013
|
DOI | 10.1186/1556-276x-8-22 |
Pubmed ID | |
Authors |
Akram M Mahjoub, Alec Nicol, Takuto Abe, Takahiro Ouchi, Yuhei Iso, Michio Kida, Noboyuki Aoki, Katsuhiko Miyamoto, Takashige Omatsu, Jonathan P Bird, David K Ferry, Koji Ishibashi, Yuichi Ochiai |
Abstract |
A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection. |
Mendeley readers
Geographical breakdown
Country | Count | As % |
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Unknown | 9 | 100% |
Demographic breakdown
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Researcher | 1 | 11% |
Other | 1 | 11% |
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