Title |
Theoretical and experimental studies of (In,Ga)As/GaP quantum dots
|
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Published in |
Discover Nano, November 2012
|
DOI | 10.1186/1556-276x-7-643 |
Pubmed ID | |
Authors |
Cedric Robert, Tra Nguyen Thanh, Charles Cornet, Pascal Turban, Mathieu Perrin, Andrea Balocchi, Herve Folliot, Nicolas Bertru, Laurent Pedesseau, Mikhail O Nestoklon, Jacky Even, Jean-Marc Jancu, Sylvain Tricot, Olivier Durand, Xavier Marie, Alain Le Corre |
Abstract |
(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k·p and tight-binding models. These calculations predict an indirect to direct crossover with the In content and the size of the QDs. The optical properties are then studied in a low-In-content range through photoluminescence and time-resolved photoluminescence experiments. It suggests the proximity of two optical transitions of indirect and direct types. |
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Geographical breakdown
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Demographic breakdown
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Unknown | 2 | 20% |