Title |
Effects of shutter transients in molecular beam epitaxy
|
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Published in |
Discover Nano, November 2012
|
DOI | 10.1186/1556-276x-7-620 |
Pubmed ID | |
Authors |
Shin-ichiro Gozu, Teruo Mozume, Haruhiko Kuwatsuka, Hiroshi Ishikawa |
Abstract |
: We have studied the effects of shutter transients (STs) in molecular beam epitaxy (MBE). Two series of samples were grown by MBE and evaluated by X-ray diffraction (XRD) and X-ray reflectivity (XRR) measurements. The effects of STs were evaluated by growth rate (GR) analysis using a combination of growth time (GT) and thickness evaluated by XRD and XRR measurements. We revealed two opposite effects of STs: (1) overshoot of GR and (2) increase in GR with GT and subsequent saturation. Each effect was consistent with the previous studies; however, the previous studies showed no relationships between these two effects. By considering closing time of the shutter, the two opposite effects were well understood. |
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