Chapter 1 Introduction Part A. Progress and Prospect of Growth of Wide-Band-Gap III-Nitrides

Chapter 2 Introduction Part B. Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches

Chapter 3 Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates

Chapter 4 Epitaxy Part B. Epitaxial Growth of GaN on Patterned Sapphire Substrates

Chapter 5 Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs

Chapter 6 Active Region Part A. Internal Quantum Efficiency in LEDs

Chapter 7 Active Region Part B. Internal Quantum Efficiency

Chapter 8 Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs

Chapter 9 Light Extraction Efficiency Part A. Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs

Chapter 10 Light Extraction Efficiency Part B. Light Extraction of High Efficient LEDs

Chapter 11 Packaging. Phosphors and White LED Packaging

Chapter 12 High Voltage LEDs

Chapter 13 Color Quality of White LEDs

Chapter 14 Emerging System Level Applications for LED Technology