problem. [3/3 of https://t.co/MpzaDkC8mg]
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framework for the corresponding inverse problems is established. Numerical implementations for the so-called stationary unipolar and stationary bipolar cases show the effectiveness of a level set approach to tackle the inverse [2/3 of https://t.co/MpzaDkC8
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We consider the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by different models connected to the voltage-current map. Stationary as well as transient settings are discussed and a [1/3 of https://t.co/Mpz
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A. Leitao P.A. Markowich, J.P. Zubelli: Inverse problems for semiconductors: models and methods https://t.co/pZa1musaSs https://t.co/4pT5yycxdB